STD18N65M2-EP
MOSFET N-CH 650V 11A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD18N65M2-EP is a 650V N-channel Power MOSFET designed for high-efficiency power switching applications. This device features a continuous drain current of 11A (Tc) and a maximum power dissipation of 110W (Tc), suitable for demanding thermal designs. The Rds(on) is specified at 375mOhm maximum at 5.5A, 10V, ensuring low conduction losses. Key parameters include a gate charge (Qg) of 14.4 nC at 10V and input capacitance (Ciss) of 700 pF at 100V. The MOSFET utilizes advanced trench technology for superior performance. It is housed in a TO-252 (DPAK) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power factor correction, switch mode power supplies, and lighting control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 375mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
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