STD180N4F6
MOSFET N-CH 40V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ STD180N4F6 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 40V drain-source breakdown voltage and supports a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 130W (Tc). The low on-resistance of 2.8mOhm at 40A and 10V drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 130nC at 10V and an input capacitance (Ciss) of 7735pF at 25V. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package for surface mounting and operates across an extended temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7735 pF @ 25 V |
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