STD170N4F7AG
MOSFET N-CHANNEL 40V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD170N4F7AG is an N-Channel Power MOSFET from the STripFET™ series, designed for demanding applications. This component offers a Drain-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 172W (Tc). Featuring a low on-resistance of 2.8mOhm at 40A and 10V, this MOSFET is optimized for efficient power switching. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting, and is supplied on Tape & Reel (TR). With a gate charge (Qg) of 63 nC (Max) at 10V and input capacitance (Ciss) of 4350 pF (Max) at 25V, it provides robust performance. Qualified to AEC-Q101 and graded for automotive applications, the STD170N4F7AG is suitable for use in automotive power management, industrial motor control, and power supply units. Operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 172W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 25 V |
| Qualification | AEC-Q101 |
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