STD15N50M2AG
MOSFET N-CHANNEL 500V 10A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD15N50M2AG is a 500 V N-Channel Power MOSFET from the MDmesh™ M2 series. This device features a continuous drain current of 10A (Tc) and a maximum power dissipation of 85W (Tc). Key parameters include a low Rds(on) of 380mOhm at 5A, 10V, and a gate charge of 13 nC at 10V. The input capacitance (Ciss) is specified at 530 pF at 100 V. Designed for surface mounting in a TO-252 (DPAK) package, this component is AEC-Q101 qualified, making it suitable for automotive applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 100 V |
| Qualification | AEC-Q101 |
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