STD155N3H6
MOSFET N-CH 30V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ VI DeepGATE™ MOSFET, part number STD155N3H6, is an N-Channel device with a 30V drain-to-source voltage. This surface mount component, housed in a TO-252-3 DPAK package, offers a continuous drain current of 80A at 25°C (Tc) and a maximum power dissipation of 110W (Tc). Key parameters include a low on-resistance of 3mOhm at 40A and 10V, and a typical gate charge of 62 nC at 10V. The device supports a gate-source voltage up to ±20V and has a threshold voltage of 4V at 250µA. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive, industrial power, and consumer electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 25 V |
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