STD150N3LLH6
MOSFET N-CH 30V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ VI DeepGATE™ N-Channel Power MOSFET, part number STD150N3LLH6, offers a 30V drain-source voltage rating and 80A continuous drain current capability at 25°C. This device features a low on-resistance of 2.8mOhm at 40A and 10V Vgs, optimized by its 4.5V to 10V gate drive voltage range. With a maximum junction temperature of 175°C and 110W power dissipation, it is suitable for demanding applications. The device utilizes STMicroelectronics' advanced MOSFET technology for efficient switching. Key parameters include a gate charge of 29nC at 4.5V and input capacitance of 3700pF at 25V. The STD150N3LLH6 is available in a TO-252-3 DPAK surface-mount package, supplied on tape and reel. Its robust performance makes it well-suited for automotive and industrial power management solutions.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
Request a Quote
Clients Also Buy
STL6N3LLH6
MOSFET N-CH 30V POWERFLAT
STD10P6F6
MOSFET P CH 60V 10A DPAK
STL12P6F6
MOSFET P-CH 60V 4A POWERFLAT
