STD14NM50N
MOSFET N-CH 500V 12A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II N-Channel Power MOSFET, part number STD14NM50N, is a 500V device designed for high-efficiency power switching applications. This surface mount DPAK package offers a continuous drain current of 12A (Tc) and a maximum power dissipation of 90W (Tc). Key electrical characteristics include a low on-resistance of 320mOhm at 6A and 10V Vgs, a gate charge of 27 nC at 10V, and an input capacitance of 816 pF at 50V Vds. The device operates at a junction temperature up to 150°C and features a Vgs(th) of 4V at 100µA. This component is widely utilized in power supply units, lighting, and motor control systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 816 pF @ 50 V |
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