STD140N6F7
MOSFET N-CH 60V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics presents the STripFET™ N-Channel Power MOSFET, part number STD140N6F7. This device features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 80A at 25°C (Tc). With a low on-resistance of 3.8mOhm at 40A and 10V Vgs, it is optimized for efficient power switching applications. The MOSFET boasts a maximum power dissipation of 134W (Tc) and a gate charge of 55 nC at 10V Vgs. Its input capacitance is rated at 3100 pF. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, this component is designed for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). Applications include power supplies, motor control, and automotive systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 30 V |
Request a Quote
Clients Also Buy
STD5N20LT4
MOSFET N-CH 200V 5A DPAK
STD30NF06LT4
MOSFET N-CH 60V 35A DPAK
STD65N55F3
MOSFET N-CH 55V 80A DPAK
