STD130N6F7
MOSFET N-CHANNEL 60V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STD130N6F7, is designed for high-efficiency power switching applications. This device features a 60V drain-source breakdown voltage and a continuous drain current capability of 80A at a case temperature of 25°C. The Rds(on) is specified at a maximum of 5mOhm at 40A and 10V gate drive, with a typical gate charge of 42 nC at 10V. The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, enabling efficient thermal management with a maximum power dissipation of 134W at 25°C (Tc). The operating temperature range spans from -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and power supply applications requiring robust performance and low conduction losses.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 134W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 30 V |
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