STD130N4F6AG
MOSFET N-CH 40V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ F6 series N-Channel Power MOSFET, part number STD130N4F6AG, offers a 40V drain-source voltage and 80A continuous drain current at 25°C. This device features a low on-resistance of 3.6mOhm maximum at 40A and 10V Vgs, coupled with a 70nC maximum gate charge at 10V. Designed for surface mounting in a TO-252-3, DPAK package, it provides 143W of power dissipation. The automotive-grade qualification (AEC-Q101) and operating temperature range of -55°C to 175°C make it suitable for demanding automotive applications. This MOSFET utilizes advanced Metal Oxide technology for efficient power management.
Additional Information
Series: STripFET™ F6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 143W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4260 pF @ 25 V |
| Qualification | AEC-Q101 |
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