STD12NM50ND
MOSFET N-CH 500V 11A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD12NM50ND is an N-Channel Power MOSFET from the FDmesh™ II series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 11A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The Rds On is specified at a maximum of 380mOhm at 5.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 30nC (Max) at 10V and input capacitance (Ciss) of 850pF (Max) at 50V. The device operates at junction temperatures up to 150°C and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This MOSFET is suitable for use in power supplies, lighting, and industrial motor control applications.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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