STD12NF06LT4
MOSFET N-CH 60V 12A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STripFET™ II series N-Channel Power MOSFET, part number STD12NF06LT4, offers a 60V drain-to-source voltage and a continuous drain current of 12A at 25°C (Tc). This component features a maximum on-resistance of 100mOhm at 6A and 10V, with a total gate charge of 10nC at 5V. It is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 surface mount package, delivering 42.8W of power dissipation at 25°C (Tc). Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for applications in automotive, industrial, and consumer electronics. The device supports gate drive voltages between 5V and 10V for optimal Rds(on) performance and has a maximum gate-source voltage rating of ±16V.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42.8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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