STD12NF06-1
MOSFET N-CH 60V 12A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD12NF06-1 is a high-performance N-Channel Power MOSFET from the STripFET™ II series. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 12 A at 25°C (Tc). The device offers a low on-resistance of 100mOhm at 6A and 10V, with a Vgs(th) of 4V at 250µA. Key electrical parameters include a Gate Charge (Qg) of 12 nC at 10V and an Input Capacitance (Ciss) of 315 pF at 25V. With a maximum power dissipation of 30W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the STD12NF06-1 is suitable for demanding applications. It is housed in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) for through-hole mounting. This MOSFET is widely utilized in power supply switching, motor control, and general-purpose power switching applications.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 25 V |
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