STD12N65M5
MOSFET N-CH 650V 8.5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ V series N-Channel Power MOSFET, part number STD12N65M5, offers a 650V drain-to-source breakdown voltage and a continuous drain current of 8.5A at 25°C (Tc). This device features a maximum on-resistance (Rds On) of 430mOhm at 4.3A and 10V Vgs. With a gate charge (Qg) of 22 nC at 10V and input capacitance (Ciss) of 900 pF at 100V, it is designed for efficient switching applications. The power dissipation capability is rated at 70W (Tc). Mounted in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, this MOSFET is suitable for surface mounting. The STD12N65M5 is utilized in various industries including power supplies, lighting, and industrial automation.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 430mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
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