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STD120N4F6

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STD120N4F6

MOSFET N-CH 40V 80A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STripFET VI series N-channel MOSFET, part number STD120N4F6, offers robust performance for demanding applications. This device features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 110 W. Its low on-resistance (Rds On) of 4 mOhm at 40 A and 10 V gate drive voltage minimizes conduction losses. Key parameters include a gate charge (Qg) of 65 nC at 10 V and input capacitance (Ciss) of 3850 pF at 25 V. Qualified to AEC-Q101 and designed for automotive applications, the STD120N4F6 is housed in a surface-mount DPAK (TO-252-3) package, supplied on tape and reel. It operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs4mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3850 pF @ 25 V
QualificationAEC-Q101

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