STD120N4F6
MOSFET N-CH 40V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET VI series N-channel MOSFET, part number STD120N4F6, offers robust performance for demanding applications. This device features a drain-source voltage (Vds) of 40 V and a continuous drain current (Id) of 80 A at 25°C, with a maximum power dissipation of 110 W. Its low on-resistance (Rds On) of 4 mOhm at 40 A and 10 V gate drive voltage minimizes conduction losses.
Key parameters include a gate charge (Qg) of 65 nC at 10 V and input capacitance (Ciss) of 3850 pF at 25 V. Qualified to AEC-Q101 and designed for automotive applications, the STD120N4F6 is housed in a surface-mount DPAK (TO-252-3) package, supplied on tape and reel. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |
| Qualification | AEC-Q101 |
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