STD11NM60ND
MOSFET N-CH 600V 10A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics' STD11NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 90W. The on-resistance (Rds On) is specified at 450mOhm maximum at 5A and 10V gate drive. With a gate charge (Qg) of 30 nC at 10V and input capacitance (Ciss) of 850 pF at 50V, this MOSFET is suitable for demanding applications. The TO-252-3, DPAK (also known as SC-63) surface mount package facilitates integration into high-density designs. Its robust construction makes it applicable in various industrial sectors including power supplies, motor control, and lighting.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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