STD11NM60N-1
MOSFET N-CH 600V 10A I-PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STD11NM60N-1 is an N-channel Power MOSFET from the MDmesh™ II series. This device features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C (Tc). With a maximum power dissipation of 90W (Tc) and a low on-resistance (Rds On) of 450mOhm at 5A and 10V, it offers efficient switching performance. Key parameters include a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 850 pF at 50V. The device operates at junction temperatures up to 150°C and is packaged in a TO-251-3 Short Leads, IPAK (TO-251AA) configuration suitable for through-hole mounting. This component is utilized in applications such as power supplies and industrial automation.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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