STD11NM60N
MOSFET N-CH 600V 10A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STD11NM60N, offers superior performance for high-efficiency power switching applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C, with a maximum power dissipation of 90W (Tc). The STD11NM60N boasts a low on-resistance (Rds On) of 450mOhm at 5A and 10V, coupled with a gate charge (Qg) of 31 nC at 10V, optimizing switching speed and reducing switching losses. Designed for surface mount applications, it is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 format and supplied on tape and reel. Key parameters include an input capacitance (Ciss) of 850 pF at 50V and a maximum operating junction temperature of 150°C. This component is widely utilized in industrial power supplies, LED lighting, and consumer electronics.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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