STD11N60M2-EP
MOSFET N-CH 600V 7.5A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD11N60M2-EP is a high-performance N-channel Power MOSFET from the MDmesh™ M2-EP series. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7.5A at 25°C (Tc). With a maximum power dissipation of 85W (Tc) and a low on-resistance (Rds On) of 595mOhm at 3.75A and 10V Vgs, it is engineered for efficient power switching applications. The DPAK (TO-252-3) surface mount package facilitates integration into compact designs. Key parameters include a gate charge (Qg) of 12.4 nC at 10V and input capacitance (Ciss) of 390 pF at 100V. This MOSFET is suitable for demanding applications in power supplies, lighting, and industrial motor control. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: MDmesh™ M2-EPRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 595mOhm @ 3.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 100 V |
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