STD110NH02LT4
MOSFET N-CH 24V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STripFET™ III series N-Channel Power MOSFET, part number STD110NH02LT4. This device features a Drain-Source Voltage (Vdss) of 24V and a continuous Drain Current (Id) of 80A at 25°C, with a maximum power dissipation of 125W (Tc). The low on-resistance (Rds On) is 5mOhm at 40A, 10V, achieved with a 10V gate drive. Input capacitance (Ciss) is 4450pF (max) at 15V, and gate charge (Qg) is 93nC (max) at 10V. Engineered for high-efficiency switching applications, it is suitable for use in automotive and industrial power management systems. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package and supplied on tape and reel. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 93 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4450 pF @ 15 V |
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