STD10PF06T4
MOSFET P-CH 60V 10A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD10PF06T4 is a P-Channel STripFET™ II power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 10A at 25°C (Tc), with a maximum power dissipation of 40W (Tc). The on-resistance (Rds On) is specified at a maximum of 200mOhm at 5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 21 nC at 10V and Input Capacitance (Ciss) of 850 pF at 25V. Operating at a junction temperature up to 175°C, this MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and supplied on tape and reel. The STripFET™ II technology offers enhanced performance characteristics suitable for automotive, industrial, and consumer electronics power management solutions.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
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