STD10PF06-1
MOSFET P-CH 60V 10A IPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STD10PF06-1 is a P-Channel STripFET™ II Power MOSFET with a 60 V drain-source voltage. This device offers a continuous drain current of 10 A at 25°C (Tc) and a maximum power dissipation of 40 W (Tc). The Rds On is specified at a maximum of 200 mOhm at 5 A and 10 V gate drive. Key parameters include a gate charge of 21 nC and input capacitance of 850 pF. Designed for through-hole mounting in an IPAK (TO-251-3 Short Leads) package, it operates at temperatures up to 175°C (TJ). Typical applications include power switching and general-purpose power management in industrial and automotive sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 25 V |
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