STD10NM65N
MOSFET N-CH 650V 9A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics MDmesh™ II series STD10NM65N is a 650 V N-Channel Power MOSFET designed for high-efficiency switching applications. This component offers a continuous drain current capability of 9 A at 25°C with a maximum power dissipation of 90 W. Key electrical specifications include a maximum Rds(on) of 480 mOhm at 4.5 A and 10 V, and a gate charge of 25 nC at 10 V. The input capacitance (Ciss) is rated at 850 pF at 50 V. This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for demanding applications in power supplies, lighting, and industrial motor control. It operates within a junction temperature range of -55°C to 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 480mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 850 pF @ 50 V |
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