STD10NM50N
MOSFET N-CH 500V 7A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ II series N-Channel Power MOSFET, part number STD10NM50N, offers 500 V drain-source voltage and 7 A continuous drain current at 25°C (Tc). This surface mount device features a low on-resistance of 630 mOhm maximum at 3.5 A, 10 V, and a maximum power dissipation of 70 W (Tc). With a gate charge of 17 nC at 10 V and input capacitance of 450 pF at 50 V, it is suitable for applications requiring efficient switching. The device operates at junction temperatures up to 150°C and is housed in a TO-252-3, DPAK package. This component is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 50 V |
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