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STD105N10F7AG

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STD105N10F7AG

MOSFET N-CH 100V 80A DPAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STripFET™ F7 series N-channel Power MOSFET STD105N10F7AG features 100V drain-to-source voltage and 80A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 8mOhm maximum at 40A, 10V, and a gate charge of 61 nC maximum at 10V. Designed for high-efficiency switching applications, it is AEC-Q101 qualified with an automotive grade, making it suitable for automotive and industrial power management systems. The device has a maximum power dissipation of 120W (Tc) and operates over a temperature range of -55°C to 175°C (TJ). Packaged in a DPAK (TO-252-3, DPAK) surface mount configuration, it is supplied on tape and reel. Key parameters include input capacitance (Ciss) of 4369 pF maximum at 50V, and a gate-source voltage (Vgs) tolerance of ±20V.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)120W (Tc)
Vgs(th) (Max) @ Id4.5V @ 250µA
Supplier Device PackageDPAK
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4369 pF @ 50 V
QualificationAEC-Q101

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