STD105N10F7AG
MOSFET N-CH 100V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ F7 series N-channel Power MOSFET STD105N10F7AG features 100V drain-to-source voltage and 80A continuous drain current at 25°C (Tc). This device offers a low on-resistance of 8mOhm maximum at 40A, 10V, and a gate charge of 61 nC maximum at 10V. Designed for high-efficiency switching applications, it is AEC-Q101 qualified with an automotive grade, making it suitable for automotive and industrial power management systems. The device has a maximum power dissipation of 120W (Tc) and operates over a temperature range of -55°C to 175°C (TJ). Packaged in a DPAK (TO-252-3, DPAK) surface mount configuration, it is supplied on tape and reel. Key parameters include input capacitance (Ciss) of 4369 pF maximum at 50V, and a gate-source voltage (Vgs) tolerance of ±20V.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4369 pF @ 50 V |
| Qualification | AEC-Q101 |
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