STD100NH03LT4
MOSFET N-CH 30V 60A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ III STD100NH03LT4 is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The low on-resistance of 5.5mOhm is achieved at 30A drain current and 10V gate-source voltage, supported by gate drive voltages from 5V to 10V. Key parameters include a maximum gate charge of 77 nC at 10V and input capacitance of 4100 pF at 15V. The STD100NH03LT4 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for demanding thermal management. This component finds application in power supplies, automotive systems, and industrial motor control. It operates across a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage rating of ±20V.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 15 V |
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