STD100NH02LT4
MOSFET N-CH 24V 60A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STD100NH02LT4 is an N-Channel STripFET™ II Power MOSFET designed for demanding applications. This device features a 24V drain-source voltage (Vdss) and a continuous drain current capability of 60A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The low on-resistance is specified at 4.8mOhm maximum at 30A and 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 84 nC maximum at 10V and input capacitance (Ciss) of 3940 pF maximum at 15V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a surface-mount TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This component is suitable for use in automotive and industrial power management systems. It is supplied in tape and reel packaging.
Additional Information
Series: STripFET™ IIRoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3940 pF @ 15 V |
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