STD100N3LF3
MOSFET N-CH 30V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ II series MOSFET, part number STD100N3LF3, is an N-Channel device featuring a 30V Vds rating and a continuous drain current capability of 80A at 25°C (Tc). This surface-mount component, housed in a TO-252-3, DPAK package, offers a low on-resistance of 5.5mOhm maximum at 40A and 10V Vgs. Key electrical parameters include a gate charge of 27 nC maximum at 5V and input capacitance of 2060 pF maximum at 25V. With a maximum power dissipation of 110W at the case temperature, the STD100N3LF3 is suitable for applications requiring high current density and efficient switching, commonly found in automotive, industrial power supplies, and power management systems. The device operates across a temperature range of -55°C to 175°C (TJ) and supports drive voltages from 5V to 10V.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 25 V |
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