STD100N10LF7AG
MOSFET N-CH 100V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STripFET™ F7 series N-channel MOSFET, part number STD100N10LF7AG, offers a 100V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). This device features a low Rds(on) of 9mOhm maximum at 40A and 10V, with a gate charge of 73nC maximum at 10V. Designed for surface mounting in a TO-252 (DPAK) package, it provides a maximum power dissipation of 125W (Tc). Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is qualified to AEC-Q101 standards, making it suitable for automotive applications. Key parameters include 4000pF maximum input capacitance (Ciss) at 25V (Vds) and a gate threshold voltage (Vgs(th)) of 2.5V maximum at 250µA.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V |
| Qualification | AEC-Q101 |
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