STD100N10F7
MOSFET N CH 100V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STripFET™ VII family MOSFET, part number STD100N10F7, is an N-Channel power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 120W (Tc). The Rds(on) is specified at a low 8mOhm at 40A and 10V gate drive, facilitated by the DeepGATE™ technology. Key parameters include a Gate Charge (Qg) of 61 nC maximum at 10V, and an input capacitance (Ciss) of 4369 pF maximum at 50V. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. This component is suitable for use in power conversion and management systems across various industrial sectors.
Additional Information
Series: DeepGATE™, STripFET™ VIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4369 pF @ 50 V |
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