STD100N03LT4
MOSFET N-CH 30V 80A DPAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STD100N03LT4 is a 30V N-Channel power MOSFET designed for high-efficiency power switching applications. This device features a low on-resistance of 5.5mOhm maximum at 40A and 10V Vgs, enabling reduced conduction losses. With a continuous drain current of 80A at 25°C and a power dissipation rating of 110W, it is suitable for demanding power management tasks. The device utilizes STripFET™ technology for optimized performance and is housed in a TO-252-3, DPAK package for effective thermal management via surface mounting. Key electrical characteristics include a gate charge of 27 nC maximum at 5V Vgs and input capacitance of 2060 pF maximum at 25V Vds. Operating temperature range is from -55°C to 175°C. This component finds application in automotive, industrial power supplies, and power conversion systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 25 V |
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