STB9NK70ZT4
MOSFET N-CH 700V 7.5A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB9NK70ZT4 is an N-channel SuperMESH™ Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 700V and a continuous drain current (Id) of 7.5A at 25°C (Tc). With a low on-resistance of 1.2 Ohm maximum at 4A and 10V Vgs, it offers efficient power handling, with a maximum power dissipation of 115W (Tc). Key parameters include a gate charge (Qg) of 68 nC at 10V and input capacitance (Ciss) of 1370 pF at 25V. The STB9NK70ZT4 is housed in a TO-263-3, D2PAK surface-mount package and is supplied on tape and reel. This component is suitable for use in power factor correction, switch mode power supplies, and general-purpose high-voltage switching applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 25 V |
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