STB9NK60ZDT4
MOSFET N-CH 600V 7A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB9NK60ZDT4 is a SuperFREDmesh™ N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C (Tc), this component offers 125W of power dissipation. The STB9NK60ZDT4 has a maximum on-resistance (Rds On) of 950mOhm at 3.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 53 nC at 10V and an input capacitance (Ciss) of 1110 pF at 25V. This device is housed in a surface-mount D2PAK (TO-263-3) package and operates within a temperature range of -55°C to 150°C. It is widely utilized in power factor correction, switch mode power supplies, and industrial motor control systems.
Additional Information
Series: SuperFREDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 25 V |
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