STB9NK50ZT4
MOSFET N-CH 500V 7.2A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB9NK50ZT4 is a SuperMESH™ N-Channel Power MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 7.2A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). Featuring a low on-resistance of 850mOhm at 3.6A and 10V (Vgs), this MOSFET utilizes advanced trench technology for improved performance. Key parameters include a gate charge (Qg) of 32 nC @ 10V and input capacitance (Ciss) of 910 pF @ 25V. The STB9NK50ZT4 is housed in a TO-263-3, D2PAK surface mount package, suitable for operation across a temperature range of -55°C to 150°C (TJ). This device finds application in power supply units, lighting, and motor control systems.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 25 V |
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