STB95N4F3
MOSFET N-CH 40V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STB95N4F3 is an N-channel STripFET™ III Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The STB95N4F3 exhibits a low on-resistance (Rds On) of 5.8mOhm maximum at 40A and 10V Vgs. Key parameters include a gate charge (Qg) of 54 nC maximum at 10V, and input capacitance (Ciss) of 2200 pF maximum at 25V. It is packaged in a TO-263 (D2PAK) surface mount configuration, supplied on tape and reel. This MOSFET is suitable for power management and automotive applications.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
Request a Quote
Clients Also Buy
STD95N4F3
MOSFET N-CH 40V 80A DPAK
STL8DN6LF3
MOSFET 2N-CH 60V 20A POWERFLAT
STP200NF03
MOSFET N-CH 30V 120A TO220AB
