STB95N3LLH6
MOSFET N-CH 30V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB95N3LLH6 is an N-channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 80A at 25°C (Tc). Optimized for high efficiency, it offers a low on-resistance (Rds On) of 4.2mOhm at 40A and 10V. The device is housed in a TO-263 (D2PAK) surface-mount package, facilitating efficient thermal management with a maximum power dissipation of 70W (Tc) and an operating junction temperature of 175°C. Key electrical parameters include a gate charge (Qg) of 24.5 nC at 4.5V and input capacitance (Ciss) of 2200 pF at 25V. This MOSFET is suitable for applications in automotive, industrial power, and power supply designs.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
Request a Quote
Clients Also Buy
STL6N3LLH6
MOSFET N-CH 30V POWERFLAT
STD10P6F6
MOSFET P CH 60V 10A DPAK
STL12P6F6
MOSFET P-CH 60V 4A POWERFLAT
