STB8NM60D
MOSFET N-CH 600V 8A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB8NM60D is a 600V N-Channel Power MOSFET from the MDmesh™ series, designed for efficient power switching applications. This device offers a continuous drain current of 8A at 25°C with a maximum power dissipation of 100W (Tc). Key electrical characteristics include a low Rds(on) of 1 Ohm at 2.5A, 10V, and a gate charge (Qg) of 18 nC @ 10V. The component features a drain-to-source voltage (Vdss) of 600V and a gate-source voltage (Vgs) range of ±30V. Packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) for surface mounting, the STB8NM60D is suitable for use in power supplies, lighting, and industrial applications. It operates within an ambient temperature range of -65°C to 150°C (TJ).
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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