STB85NF3LLT4
MOSFET N-CH 30V 85A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II N-Channel Power MOSFET, part number STB85NF3LLT4, offers a 30V drain-source voltage and continuous drain current of 85A at 25°C. This device features a low on-resistance of 8mOhm maximum at 40A and 10V Vgs, with a gate charge of 40 nC at 4.5V. The input capacitance (Ciss) is 2210 pF maximum at 25V. Designed for surface mount applications, it is packaged in a TO-263-3, D2PAK configuration and supplied on tape & reel. The STB85NF3LLT4 is suitable for power management applications in automotive and industrial sectors. It supports a Vgs range of ±16V and has a maximum power dissipation of 110W at 25°C. The threshold voltage (Vgs(th)) is 1V maximum at 250µA.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 25 V |
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