STB80NF55L-08-1
MOSFET N-CH 55V 80A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The STMicroelectronics STB80NF55L-08-1 is an N-Channel STripFET™ II Power MOSFET featuring a 55V drain-to-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). This device offers a low on-resistance of 8mOhm at 40A and 10V Vgs, with a maximum gate charge of 100 nC at 4.5V. The input capacitance (Ciss) is specified at 4350 pF maximum at 25V. Designed for high power applications, it dissipates up to 300W (Tc) and operates at junction temperatures up to 175°C. The STB80NF55L-08-1 is housed in an I2PAK package with through-hole mounting and is suitable for demanding applications in power supplies, motor control, and automotive systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4350 pF @ 25 V |
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