STB80NF55L-06T4
MOSFET N-CH 55V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB80NF55L-06T4 is an N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. This device features a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C. The Rds(On) is minimized to 6.5mOhm at 40A and 10V gate drive, ensuring low conduction losses. With a maximum power dissipation of 300W (Tc), this MOSFET is suitable for demanding thermal environments. The D2PAK (TO-263-3) surface mount package facilitates efficient thermal management and board integration. Key electrical characteristics include a gate charge (Qg) of 136 nC (max) at 5V and input capacitance (Ciss) of 4850 pF (max) at 25V. This component is utilized in industries such as automotive, industrial power supplies, and electric vehicle systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 25 V |
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