STB80NF55-08T4
MOSFET N-CH 55V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB80NF55-08T4 is a high-performance N-Channel STripFET™ MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vds) of 55V and a continuous drain current (Id) capability of 80A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 8mOhm at 40A and 10V. Its robust construction supports a maximum power dissipation of 300W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). The device utilizes a D2PAK (TO-263-3) surface mount package, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 3850 pF at 25V. This MOSFET is suitable for power switching and motor control applications in automotive and industrial sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V |
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