STB80NF55-08AG
MOSFET N-CHANNEL 55V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB80NF55-08AG is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The STB80NF55-08AG boasts a low on-resistance of 8mOhm at 40A and 10V, facilitated by its 10V drive voltage. Key electrical characteristics include a Gate Charge (Qg) of 112 nC at 10V and an input capacitance (Ciss) of 3740 pF at 15V. Qualified to AEC-Q101 and carrying an Automotive grade, this MOSFET is suitable for automotive power management, motor control, and industrial power systems. It is supplied in a surface mount D2PAK (TO-263-3, D2PAK) package, delivered on Tape & Reel (TR). The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3740 pF @ 15 V |
| Qualification | AEC-Q101 |
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