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STB80NF55-06-1

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STB80NF55-06-1

MOSFET N-CH 55V 80A I2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STB80NF55-06-1 is an N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. Featuring a Drain-Source Voltage (Vdss) of 55V and continuous Drain Current (Id) capability of 80A at 25°C (Tc), this device offers a low on-resistance of 6.5mOhm maximum at 40A, 10V. The STB80NF55-06-1 is housed in an I2PAK package, suitable for through-hole mounting, and supports a maximum power dissipation of 300W (Tc). Key parameters include a Gate Charge (Qg) of 189 nC at 10V and an Input Capacitance (Ciss) of 4400 pF at 25V. This component is utilized in industries such as automotive, industrial power supplies, and motor control where robust power handling is critical. It operates across a wide temperature range from -55°C to 175°C (TJ) with a maximum Gate-Source Voltage (Vgs) of ±20V.

Additional Information

Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)300W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageI2PAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs189 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4400 pF @ 25 V

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