STB80NF55-06-1
MOSFET N-CH 55V 80A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB80NF55-06-1 is an N-Channel STripFET™ II Power MOSFET designed for high-efficiency power switching applications. Featuring a Drain-Source Voltage (Vdss) of 55V and continuous Drain Current (Id) capability of 80A at 25°C (Tc), this device offers a low on-resistance of 6.5mOhm maximum at 40A, 10V. The STB80NF55-06-1 is housed in an I2PAK package, suitable for through-hole mounting, and supports a maximum power dissipation of 300W (Tc). Key parameters include a Gate Charge (Qg) of 189 nC at 10V and an Input Capacitance (Ciss) of 4400 pF at 25V. This component is utilized in industries such as automotive, industrial power supplies, and motor control where robust power handling is critical. It operates across a wide temperature range from -55°C to 175°C (TJ) with a maximum Gate-Source Voltage (Vgs) of ±20V.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 189 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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