STB80NF03L-04-1
MOSFET N-CH 30V 80A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ II series STB80NF03L-04-1 is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 80A at 25°C (Tc). Its low on-resistance is specified as 4mOhm maximum at 40A and 10V (Vgs). The device offers a maximum power dissipation of 300W (Tc) and is housed in an I2PAK (TO-262-3 Long Leads, I2PAK, TO-262AA) package for through-hole mounting. Key parameters include a Gate Charge (Qg) of 110 nC max at 4.5V (Vgs) and an input capacitance (Ciss) of 5500 pF max at 25V (Vds). Operating temperature range is -60°C to 175°C (TJ). This MOSFET is suitable for various industrial applications requiring efficient power switching.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -60°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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