STB80NE03L-06T4
MOSFET N-CH 30V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ N-Channel Power MOSFET, part number STB80NE03L-06T4, offers a 30V drain-source breakdown voltage and 80A continuous drain current at 25°C. This device features a low on-resistance of 6mOhm maximum at 40A and 10V Vgs, optimized for efficient power switching. With a gate charge of 130 nC maximum at 5V Vgs and input capacitance of 6500 pF maximum at 25V Vds, it is suitable for demanding power management applications. The STB80NE03L-06T4 is housed in a TO-263-3, D2PAK surface mount package, facilitating high-density board designs. Its high power dissipation capability of 150W at 25°C and wide operating temperature range of -55°C to 175°C make it robust for automotive, industrial, and telecommunications power supply systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 25 V |
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