STB80N4F6AG
MOSFET N-CH 40V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STripFET™ STB80N4F6AG is a 40V N-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified device features a low Rds(on) of 6mOhm at 40A and 10V Vgs, ensuring high efficiency. With a continuous drain current capability of 80A (Tc) and a maximum power dissipation of 70W (Tc), it is suitable for high-power switching. The device utilizes Metal Oxide technology and is packaged in a TO-263 (D2PAK) surface mount configuration, compatible with Tape & Reel (TR) packaging. Key electrical characteristics include a gate charge of 36 nC @ 10V and input capacitance of 2150 pF @ 25V. The operating temperature range is -55°C to 175°C. This component is commonly employed in automotive power management and motor control systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 25 V |
| Qualification | AEC-Q101 |
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