STB7N52K3
MOSFET N-CH 525V 6A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics SuperMESH3™ STB7N52K3 is an N-Channel Power MOSFET designed for high-voltage applications. This device offers a 525 V (Vdss) drain-to-source breakdown voltage and a continuous drain current (Id) of 6 A at 25°C (Tc). With a maximum power dissipation of 90 W (Tc), it is suitable for demanding power conversion and switching applications. The Rds On (Max) is specified at 980 mOhm at 3.1 A and 10 V (Vgs). Featuring a TO-263-3, D2PAK surface mount package, this MOSFET is ideal for use in industrial power supplies, lighting control, and automotive applications requiring robust performance and thermal management. Key parameters include a gate charge (Qg) of 34 nC at 10 V and an input capacitance (Ciss) of 737 pF at 100 V. The device operates at temperatures up to 150°C (TJ).
Additional Information
Series: SuperMESH3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 980mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 525 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 737 pF @ 100 V |
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