STB7ANM60N
MOSFET N-CH 600V 5A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB7ANM60N is an N-channel power MOSFET from the MDmesh™ II series, designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 5A at 25°C, with a maximum power dissipation of 45W (Tc). The On-Resistance (Rds On) is specified at a maximum of 900mOhm at 2.5A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 14 nC (max) at 10V and Input Capacitance (Ciss) of 363 pF (max) at 50V. The STB7ANM60N is housed in a TO-263-3, D2PAK package, facilitating surface mounting. This component is qualified to AEC-Q101 standards and is suitable for automotive applications. Its Metal Oxide technology ensures robust performance in demanding environments.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250mA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 363 pF @ 50 V |
| Qualification | AEC-Q101 |
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