STB78NF55-08
MOSFET N-CH 55V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB78NF55-08, an N-Channel STripFET™ II Power MOSFET, is designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The STB78NF55-08 boasts a low on-resistance (Rds On) of 8mOhm at 40A and 10V gate-source voltage (Vgs). Its surface mount TO-263 (D2PAK) package facilitates integration into dense board layouts. Key electrical parameters include a gate charge (Qg) of 155 nC at 10V and input capacitance (Ciss) of 3740 pF at 25V. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is suitable for automotive and industrial power systems.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3740 pF @ 25 V |
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