STB75NH02LT4
MOSFET N-CH 24V 60A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB75NH02LT4 is an N-Channel STripFET™ III Power MOSFET. This component features a Drain-Source Voltage (Vdss) of 24V and a continuous drain current (Id) of 60A at 25°C (Tc). The Rds(on) is specified at a maximum of 8 mOhm at 30A and 10V, with a total power dissipation (Pd) of 80W (Tc). The device utilizes surface mount technology in a TO-263-3, D2PAK package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 22 nC at 5V and input capacitance (Ciss) of 2050 pF at 15V. The STB75NH02LT4 is suitable for applications in automotive and industrial power management systems. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: STripFET™ IIIRoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 15 V |
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